Nonvolatile semiconductor memory device and method for manufacturing same

ABSTRACT

A multilayer body is formed by alternately stacking electrode films serving as control gates and dielectric films in a direction orthogonal to an upper surface of a silicon substrate. Trenches extending in the word line direction are formed in the multilayer body and a memory film is formed on an inner surface of the trench. Subsequently, a silicon body is buried inside the trench, and a charge storage film and the silicon body are divided in the word line direction to form silicon pillars. This simplifies the configuration of memory cells in the bit line direction, and hence can shorten the arrangement pitch of the silicon pillars, decreasing the area per memory cell.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefits of priority fromthe prior Japanese Patent Application No. 2008-210450, filed on Aug. 19,2008; the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a nonvolatile semiconductor memory device anda method for manufacturing the same, and more particularly to anonvolatile semiconductor memory device with a plurality of dielectricfilms and a plurality of electrode films alternately stacked therein,and a method for manufacturing the same.

2. Background Art

Higher capacity and lower cost are expected of a flash memory as anonvolatile semiconductor memory device in the future. A common methodfor increasing the capacity of a flash memory is to advance lithographyand other processing techniques to downscale the structure, therebyincreasing the level of integration of memory cells. However,downscaling in processing techniques has already been close to thelimit. It is difficult to significantly increase the capacity of a flashmemory simply by relying on the advancement of processing techniques asconventional.

In this context, the technique of a three-dimensional flash memoryattracts new attention. This technique can increase the capacity bystacking memory cells also in a three-dimensional direction (seeJP-A-2007-266143). In such a three-dimensional flash memory, the levelof integration in the plane can be increased by downscaling the planarstructure, and the level of integration in the stacking direction can beincreased by increasing the number of stacked layers. Thus, furtherdownscaling the planar structure is useful for higher capacity also in athree-dimensional flash memory.

SUMMARY OF THE INVENTION

According to an aspect of the invention, there is provided a nonvolatilesemiconductor memory device including: a multilayer body with aplurality of dielectric films and a plurality of electrode filmsalternately stacked therein and a trench that extends in one directionorthogonal to the stacking direction being formed therein; semiconductorpillars arranged along the one direction and spaced from each otherinside the trench; and a charge storage film provided between theelectrode film and the semiconductor pillar, the charge storage filmbeing divided in the one direction, and being not provided between aportion between the semiconductor pillars inside the trench, and theelectrode film and the dielectric film.

According to another aspect of the invention, there is provided a methodfor manufacturing a nonvolatile semiconductor memory device, including:forming a multilayer body by alternately stacking a plurality ofdielectric films and a plurality of electrode films; forming a trench inthe multilayer body, the trench extending in one direction orthogonal tothe stacking direction; forming a charge storage film on an innersurface of the trench; burying a semiconductor member inside the trench;and dividing the charge storage film and the semiconductor member in theone direction.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a process plan view illustrating a method for manufacturing anonvolatile semiconductor memory device according to a first embodimentof the invention, and FIG. 1B is a process cross-sectional view takenalong line A-A′ shown in FIG. 1A;

FIG. 2A is a process plan view illustrating the method for manufacturingthe nonvolatile semiconductor memory device according to the firstembodiment, and FIG. 2B is a process cross-sectional view taken alongline A-A′ shown in FIG. 2A;

FIG. 3A is a process plan view illustrating the method for manufacturingthe nonvolatile semiconductor memory device according to the firstembodiment, and FIG. 3B is a process cross-sectional view taken alongline A-A′ shown in FIG. 3A;

FIG. 4A is a process plan view illustrating the method for manufacturingthe nonvolatile semiconductor memory device according to the firstembodiment, and FIG. 4B is a process cross-sectional view taken alongline A-A′ shown in FIG. 4A;

FIG. 5A is a process plan view illustrating the method for manufacturingthe nonvolatile semiconductor memory device according to the firstembodiment, and FIG. 5B is a process cross-sectional view taken alongline A-A′ shown in FIG. 5A;

FIG. 6 is a process plan view illustrating the method for manufacturingthe nonvolatile semiconductor memory device according to the firstembodiment;

FIG. 7 is a process plan view illustrating the method for manufacturingthe nonvolatile semiconductor memory device according to the firstembodiment;

FIG. 8A is a process plan view illustrating the method for manufacturingthe nonvolatile semiconductor memory device according to the firstembodiment, and FIG. 8B is a process cross-sectional view taken alongline B-B′ shown in FIG. 8A;

FIG. 9A is a process plan view illustrating the method for manufacturingthe nonvolatile semiconductor memory device according to the firstembodiment, and FIG. 9B is a process cross-sectional view taken alongline B-B′ shown in FIG. 9A;

FIG. 10A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, and FIG. 10B is a process cross-sectional viewtaken along line B-B′ shown in FIG. 10A;

FIG. 11A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 11B is a process cross-sectional view takenalong line A-A′ shown in FIG. 11A, FIG. 11C is a process cross-sectionalview taken along line B-B′ shown in FIG. 11A, and FIG. 11D is a processcross-sectional view taken along line C-C′ shown in FIG. 11A;

FIG. 12A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 12B is a process cross-sectional view takenalong line A-A′ shown in FIG. 12A, FIG. 12C is a process cross-sectionalview taken along line B-B′ shown in FIG. 12A, and FIG. 12D is a processcross-sectional view taken along line C-C′ shown in FIG. 12A;

FIG. 13A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 13B is a process cross-sectional view takenalong line A-A′ shown in FIG. 13A, FIG. 13C is a process cross-sectionalview taken along line B-B′ shown in FIG. 13A, and FIG. 13D is a processcross-sectional view taken along line C-C′ shown in FIG. 13A;

FIG. 14A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 14B is a process cross-sectional view takenalong line A-A′ shown in FIG. 14A, and FIG. 14C is a processcross-sectional view taken along line B-B′ shown in FIG. 14A;

FIG. 15A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 15B is a process cross-sectional view takenalong line A-A′ shown in FIG. 15A, and FIG. 15C is a processcross-sectional view taken along line B-B′ shown in FIG. 15A;

FIG. 16A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 16B is a process cross-sectional view takenalong line A-A′ shown in FIG. 16A, and FIG. 16C is a processcross-sectional view taken along line B-B′ shown in FIG. 16A;

FIGS. 17A and 17B are process views illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, where FIG. 17A is a plan view, and FIG. 17B is anenlarged view of portion D shown in FIG. 17A;

FIG. 18 is a schematic circuit diagram illustrating the nonvolatilesemiconductor memory device as shown in FIGS. 17A and 17B;

FIG. 19 is a process plan view illustrating the method for manufacturingthe nonvolatile semiconductor memory device according to the firstembodiment;

FIG. 20A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 20B is a process cross-sectional view takenalong line A-A′ shown in FIG. 20A, and FIG. 20C is a processcross-sectional view taken along line B-B′ shown in FIG. 20A;

FIG. 21A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 21B is a process cross-sectional view takenalong line A-A′ shown in FIG. 21A, and FIG. 21C is a processcross-sectional view taken along line B-B′ shown in FIG. 21A;

FIG. 22A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 22B is a process cross-sectional view takenalong line A-A′ shown in FIG. 22A, and FIG. 22C is a processcross-sectional view taken along line B-B′ shown in FIG. 22A;

FIG. 23A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 23B is a process cross-sectional view takenalong line A-A′ shown in FIG. 23A, and FIG. 23C is a processcross-sectional view taken along line B-B′ shown in FIG. 23A;

FIG. 24A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 24B is a process cross-sectional view takenalong line A-A′ shown in FIG. 24A, and FIG. 24C is a processcross-sectional view taken along line B-B′ shown in FIG. 24A;

FIG. 25A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 25B is a process cross-sectional view takenalong line A-A′ shown in FIG. 25A, and FIG. 25C is a processcross-sectional view taken along line B-B′ shown in FIG. 25A;

FIG. 26A is a process plan view illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothe first embodiment, FIG. 26B is a process cross-sectional view takenalong line A-A′ shown in FIG. 26A, and FIG. 26C is a processcross-sectional view taken along line B-B′ shown in FIG. 26A;

FIG. 27 is a plan view illustrating a nonvolatile semiconductor memorydevice according to a comparative example; and

FIG. 28A is a plan view illustrating a nonvolatile semiconductor memorydevice according to a second embodiment of the invention, and FIG. 28Bis a plan view showing portion A shown in FIG. 28A.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the invention will now be described with reference to thedrawings.

At the outset, a first embodiment of the invention is described.

The nonvolatile semiconductor memory device according to this embodimentis a three-dimensional flash memory. Briefly, this embodiment ischaracterized as follows. Trenches extending in the word line directionare formed in a multilayer body of electrode films, serving as controlgates, and dielectric films. A charge storage film is formed on theinner surface of this trench, and a silicon body is buried in thetrench. The charge storage film and the silicon body are divided in theword line direction to form silicon pillars. This simplifies theconfiguration of memory cells in the word line direction, and hence candecrease the cell length of the word line direction and the area permemory cell. Furthermore, in the nonvolatile semiconductor memory devicethus manufactured, the charge storage film is provided only in the bitline direction as viewed from the silicon pillar, and divided in theword line direction. This serves to prevent interference between memorycells arranged in the word line direction.

This embodiment is described below in detail.

First, a method for manufacturing a nonvolatile semiconductor memorydevice according to this embodiment is described.

FIGS. 1A to 5B are process views illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothis embodiment, where FIGS. 1A, 2A, 3A, 4A, and 5A are plan views, andFIGS. 1B, 2B, 3B, 4B, and 5B are cross-sectional views taken along lineA-A′ shown in FIGS. 1A, 2A, 3A, 4A, and 5A, respectively.

FIGS. 6 and 7 are process plan views illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothis embodiment.

FIGS. 8A to 10B are process views illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothis embodiment, where FIGS. 8A, 9A, and 10A are plan views, and FIGS.8B, 9B, and 10B are cross-sectional views taken along line B-B′ shown inFIGS. 8A, 9A, and 10A, respectively.

FIGS. 11A to 13D are process views illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothis embodiment, where FIGS. 11A, 12A, and 13A are plan views, FIGS.11B, 12B, and 13B are cross-sectional views taken along line A-A′ shownin FIGS. 11A, 12A, and 13A, respectively, FIGS. 11C, 12C, and 13C arecross-sectional views taken along line B-B′ shown in FIGS. 11A, 12A, and13A, respectively, and FIGS. 11D, 12D, and 13D are cross-sectional viewstaken along line C-C′ shown in FIGS. 11A, 12A, and 13A, respectively.

FIGS. 14A to 16C are process views illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothis embodiment, where FIGS. 14A, 15A, and 16A are plan views, FIGS.14B, 15B, and 16B are cross-sectional views taken along line A-A′ shownin FIGS. 14A, 15A, and 16A, respectively, and FIGS. 14C, 15C, and 16Care cross-sectional views taken along line B-B′ shown in FIGS. 14A, 15A,and 16A, respectively.

FIGS. 17A and 17B are process views illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothis embodiment, where FIG. 17A is a plan view, and FIG. 17B is anenlarged view of portion D shown in FIG. 17A.

FIG. 18 is a schematic circuit diagram illustrating the nonvolatilesemiconductor memory device as shown in FIGS. 17A and 17B.

FIG. 19 is a process plan view illustrating the method for manufacturingthe nonvolatile semiconductor memory device according to thisembodiment, showing the same region as FIG. 17B.

FIGS. 20A to 26C are process views illustrating the method formanufacturing the nonvolatile semiconductor memory device according tothis embodiment, where FIGS. 20A, 21A, 22A, 23A, 24A, 25A, and 26A areplan views, FIGS. 20B, 21B, 22B, 23B, 24B, 25B, and 26B arecross-sectional views taken along line A-A′ shown in FIGS. 20A, 21A,22A, 23A, 24A, 25A, and 26A, respectively, and FIGS. 20C, 21C, 22C, 23C,24C, 25C, and 26C are cross-sectional views taken along line B-B′ shownin FIGS. 20A, 21A, 22A, 23A, 24A, 25A, and 26A, respectively.

The method for manufacturing a nonvolatile semiconductor memory deviceaccording to this embodiment is broadly divided into the following threeprocesses:

(1) Fabricating a lower select gate transistor section by arranging aplurality of lower select gate transistors on a silicon substrate in atwo-dimensional matrix configuration;

(2) Fabricating a memory cell section by arranging a plurality of memorycells on the lower select gate transistor section in a three-dimensionalmatrix configuration; and

(3) Fabricating an upper select gate transistor section by arranging aplurality of upper select gate transistors on the memory cell section ina two-dimensional matrix configuration.

First, the method for fabricating a lower select gate transistor sectionis described.

As shown in FIGS. 1A and 1B, a silicon substrate 11 is prepared, andsilicon oxide is deposited on this silicon substrate 11 illustrativelyby using TEOS (tetraethoxysilane, or tetraethyl orthosilicate,Si(OC₂H₅)₄) to form an interlayer dielectric film 12.

Next, polysilicon is deposited to form a lower gate electrode film 13.Then, an interlayer dielectric film 14 illustratively made of siliconnitride is formed. Subsequently, a hard mask 15 illustratively made ofBSG (boron silicate glass, or boron-doped silicon glass) is formed.

Next, as shown in FIGS. 2A and 2B, the hard mask 15, the interlayerdielectric film 14, the lower gate electrode film 13, and the interlayerdielectric film 12 are processed by lithography. Thus, a plurality oftrenches 16 arranged in the bit line direction and extending in the wordline direction are formed. It is noted that the stacking direction ofthe aforementioned films, the word line direction, and the bit linedirection are orthogonal to each other. Here, the width of the trench 16is 1.5F, and the arrangement pitch of the trenches 16 is 3.5F, where Fis the minimum processing dimension of lithography. Hence, the distancebetween the trenches 16 is 2F. The trench 16 is shaped like a tapernarrowing downward. The silicon substrate 11 is exposed to the bottom ofthe trench 16.

Next, as shown in FIGS. 3A and 3B, a gate dielectric film 17illustratively made of silicon nitride and having a thickness of e.g. 20nm is formed on the inner surface of the trench 16.

Next, as shown in FIGS. 4A and 4B, a spacer film 18 illustratively madeof amorphous silicon is formed on the gate dielectric film 17. Next, RIE(reactive ion etching) and dilute hydrofluoric acid treatment areperformed to remove the spacer film 18, the gate dielectric film 17, andnatural oxide film and the like from the bottom of the trench 16 toexpose the silicon substrate 11. Here, the spacer film 18 functions as aprotective film for protecting the gate dielectric film 17 from dilutehydrofluoric acid.

Next, as shown in FIGS. 5A and 5B, the spacer film 18 (see FIGS. 4A and4B) is removed from inside the trench 16, which is then refilled withsilicon so that a silicon body 19 is formed as a semiconductor member inthe trench 16.

Next, as shown in FIG. 6, a silicon nitride film 21 is formed as a maskfilm entirely on the hard mask 15 (see FIGS. 5A and 5B). Next, a resistfilm 22 is formed on the silicon nitride film 21. The resist film 22 hasa line-and-space pattern extending in the bit line direction, that is,in the direction orthogonal to the extending direction (word linedirection) of the trenches 16, and having a width of 1F and anarrangement pitch of 2F.

Next, as shown in FIG. 7, the resist film 22 is slimmed by isotropicetching such as CDE (chemical dry etching) to reduce its width to 0.5F.Here, the distance between the adjacent resist films 22 becomes 1.5F.Then, this resist film 22 is used as a mask to perform RIE to processthe silicon nitride film 21. Thus, the silicon nitride film 21 isprocessed into a line-and-space pattern extending in the bit linedirection, where the width of the line portion is 0.5F and thearrangement pitch is 2F. Subsequently, the resist film 22 is removed.

Next, as shown in FIGS. 8A and 8B, a silicon oxide film, for example, isformed on the entire surface so as to cover the patterned siliconnitride film 21. Next, this silicon oxide film is etched back to be leftonly on both side surfaces of the silicon nitride film 21 so that asidewall 23 made of silicon oxide is formed on both side surfaces of thesilicon nitride film 21. The thickness of the silicon oxide film formedis such that the width of this sidewall 23 is 0.5F.

Next, as shown in FIGS. 9A and 9B, the silicon nitride film 21 as a maskfilm is removed illustratively by using hot phosphoric acid. Thus, onlythe sidewall 23 is left on the hard mask 15. Consequently, the sidewall23 realizes a line-and-space pattern, where the arrangement pitch is 1Fand the line and the space each have a width of 0.5F.

Next, as shown in FIGS. 10A and 10B, the sidewall 23 is used as a maskto perform RIE and wet etching to selectively remove the silicon body 19and the gate dielectric film 17. Thus, the silicon body 19 and the gatedielectric film 17 are processed into a line-and-space pattern having anarrangement pitch of 1F and each having a width of 0.5F. The processingprocess shown in FIGS. 6 to 10B is referred to as “sidewall transferprocess”. At this time, the hard mask 15 is also removed to some extent.However, because the hard mask 15 is thick enough to remain to the end,and the lower gate electrode film 13 and the like therebelow are notprocessed. Thus, the silicon body 19 is divided in each trench 16 into aplurality of silicon pillars 25 arranged in a row in the word linedirection. Each silicon pillar 25 is shaped like a tapered, generallyquadrangular prism, which widens downward in the word line direction,narrows downward in the bit line direction, and is shaped like arectangle as viewed from above. Furthermore, in the bit line directionas viewed from each silicon pillar 25, that is, between each siliconpillar 25 and the lower gate electrode film 13 and the like, the gatedielectric film 17 is left behind.

Next, as shown in FIGS. 11A to 11D, the sidewall 23 (see FIGS. 10A and10B) is removed.

Next, as shown in FIGS. 12A to 12D, the silicon pillar 25 and the gatedielectric film 17 are recessed by a combination of, for example, RIEand wet etching, to lower the upper surface of the silicon pillar 25 andthe gate dielectric film 17 to the position of the lower surface of thehard mask 15.

Next, as shown in FIGS. 13A to 13D, the hard mask 15 is removed. Then,TEOS or the like is used to bury silicon oxide 26 in the space betweenthe silicon pillars 25 in the trench 16.

Thus, a vertical transistor is formed at the intersection between eachsilicon pillar 25 and each lower gate electrode film 13 and serves as alower select gate transistor. Thus, the lower select gate transistorsare arranged in a two-dimensional matrix configuration, and as a whole,a lower select gate transistor section LSG is fabricated.

Next, a memory cell section is formed above the lower select gatetransistor section LSG. The method for fabricating the memory cellsection is described below.

As shown in FIGS. 14A to 14C, dielectric films 31 illustratively made ofsilicon oxide and electrode films 32 illustratively made of polysiliconare alternately stacked to form a multilayer body. For example, thedielectric film 31 and the electrode film 32 are each formed in fourlayers. Subsequently, a silicon oxide film 33 is formed, and a siliconnitride film 34 is formed. Next, a hard mask 35 illustratively made ofsilicon nitride or BSG is formed. The electrode film 32 is a conductivefilm to be processed in the subsequent process and serve as a word lineof the nonvolatile semiconductor memory device according to thisembodiment.

The fabrication method subsequent thereto has a lot in common with theaforementioned method for fabricating the lower select gate transistorsection, and hence the common features are described briefly.

As shown in FIGS. 15A to 15C, the hard mask 35, the silicon nitride film34, the silicon oxide film 33, the plurality of electrode films 32, andthe plurality of interlayer dielectric films 31 are selectively etchedaway to form trenches 36 extending in the word line direction. Thetrench 36 is shaped like a taper narrowing downward. The trench 36 isformed immediately above the trench 16.

Next, as shown in FIGS. 16A to 16C, on the inner surface of the trench36, a silicon oxide film is deposited as a block film 37 to a thicknessof e.g. 5 nm, a silicon nitride film is deposited as a charge storagefilm 38 to a thickness of e.g. 5 nm, and a silicon oxide film isdeposited as a tunnel film 39 to a thickness of e.g. 3.5 nm. The blockfilm 37, the charge storage film 38, and the tunnel film 39 constitute amemory film 40. The block film 37 is a film which substantially blocksthe flow of current despite application of voltage within the operatingvoltage range of the device 1. The charge storage film 38 is a filmwhich can retain charge, such as a film including electron trap sites.The tunnel film 39 is a film which is normally insulative, but passes atunneling current upon application of a prescribed voltage within theoperating voltage range of the device 1. Subsequently, a silicon body 44is buried as a semiconductor member in the trench 36.

Next, the charge storage film 38, the tunnel film 39, and the siliconbody 44 in the trench 36 are divided along the word line direction bythe aforementioned sidewall transfer process. The method for thisdivision is described below.

First, a mask film (not shown) made of silicon oxide is formed, and aline-and-space resist pattern (not shown) is formed, extending in thebit line direction and having a line width of 1F and an arrangementpitch of 2F. The line width of this resist pattern is reducedillustratively by CDE. Here, in expectation of the side etching amountdescribed later, the line width of the resist pattern is made thinnerthan 0.5F. Next, this resist pattern is used as a mask to etch the maskfilm to form a line-and-space mask pattern (not shown) extending in thebit line direction and having a line width of less than 0.5F and anarrangement pitch of 2F.

Subsequently, the resist pattern is removed. A sidewall 47 (see FIG.17A) having a thickness of 0.5F plus a side etching amount is formed onthe side surface of the etched mask film, and the mask film is removed.Thus, a line-and-space pattern is formed from the sidewall 47, extendingin the bit line direction and having a line width thicker than 0.5F andan arrangement pitch of 1F.

Next, as shown in FIG. 17A, the sidewall 47 is used as a mask to performRIE. The condition for this RIE is such that the etching rate forpolysilicon is sufficiently higher than the etching rate for siliconoxide and silicon nitride. This makes it possible to selectively removeonly the silicon body 44 without substantially removing the memory film40 in the trench 36. Consequently, the silicon body 44 is divided in theword line direction into silicon pillars 45 formed immediately below thesidewall 47.

Next, wet etching with dilute hydrofluoric acid is performed with thesidewall 47 left behind. This removes the tunnel film 39 made of siliconoxide in the opening between the sidewalls 47 (hereinafter referred toas “mask opening”). Next, wet etching with hot phosphoric acid isperformed with the sidewall 47 left behind. This removes the chargestorage film 38 made of silicon nitride in the mask opening.

At this time, as shown in FIG. 17B, due to isotropy of wet etching,immediately below the sidewall 47, the tunnel film 39 and the chargestorage film 38 are side-etched from both lateral sides. For example, inthe case where the charge storage film 38 has a thickness of 5 nm,sufficient removal of the charge storage film 38 in the mask openingresults in side etching of 5 nm or more on each side immediately belowthe sidewall 47, thereby shortening the length of the charge storagefilm 38 in the word line direction. On the other hand, the siliconpillar 45 made of polysilicon is hardly affected by the aforementionedwet etching, and hence is left also between the portions of the chargestorage film 38 removed by side etching.

Consequently, as shown in FIG. 18, in one memory cell, a memorytransistor T1 having a charge storage film and being capable of shiftingits threshold voltage by charge programming, and a fixed thresholdtransistor T2 having no charge storage film and being incapable ofshifting its threshold voltage by charge programming are formed, andconnected in parallel to each other. In this case, even if “0” iswritten to this memory cell, the threshold voltage of the fixedthreshold transistor T2 does not change although the threshold voltageof the memory transistor T1 changes. Hence, a read operation on thismemory cell may result in turning on the fixed threshold transistor T2earlier, and the programmed value is determined as “1”, causingmisreading.

Thus, in this embodiment, to avoid this, after the silicon pillars 45are formed by selectively removing the silicon body 44 by RIE, oxidationis performed as shown in FIG. 19. This oxidizes both side portions ofthe silicon pillar 45 in the word line direction from the mask openingside to a depth corresponding to the aforementioned side etching of thecharge storage film 38 to form an oxidized portion 48. Subsequently, thesidewall 47 is removed. Thus, in the word line direction, the width ofthe silicon pillar 45 is thinned by the amount of the oxidized portion48 and becomes generally equal to the width of the charge storage film38. Consequently, the memory cell is formed in region R shown in FIG.19, and the fixed threshold transistor T2 shown in FIG. 18 is notformed. Thus, the aforementioned misreading can be avoided.

Here, instead of oxidizing both side portions of the silicon pillar 45as described above, both side portions of the silicon pillar 45 may beremoved (recessed) by CDE. In this case, the condition for CDE is suchthat the etching rate for silicon is higher than the etching rate forsilicon oxide and silicon nitride and allows only silicon to be removedwith high selection ration. Thus, the width of the silicon pillar 45remaining in the memory cell is made equal to the width of the chargestorage film 38.

By the foregoing method, as shown in FIGS. 20A to 20C, the silicon body44 in the trench 36 can be divided in the word line direction intosilicon pillars 45, and simultaneously the charge storage film 38 andthe tunnel film 39 can be divided in the word line direction. Asdescribed above, although the sidewall 47 is formed with a width thickerthan 0.5F, the width of the charge storage film 38, the tunnel film 39,and the silicon pillar 45 is decreased to 0.5F by side etching of thecharge storage film 38 and the tunnel film 39 shown in FIG. 17B and sidesurface oxidation of the silicon pillar 45 shown in FIG. 19.Consequently, in the word line direction, a periodic structure with aline width of 0.5F and a space width of 0.5F can be realized.Furthermore, the silicon pillar 45 is located immediately above andcoupled to the silicon pillar 25. As viewed from above, the siliconpillar 45 is shaped like a rectangle.

Next, as shown in FIGS. 21A to 21C, the silicon pillar 45 and the memoryfilm 40 are recessed by a combination of, for example, RIE and wetetching, to lower the upper surface of the silicon pillar 45 and thememory film 40 to the position of the lower surface of the hard mask 35(see FIGS. 20A to 20C). Subsequently, the hard mask 35 is removed.

Next, as shown in FIGS. 22A to 22C, silicon oxide 46 is buried betweenthe silicon pillars 45. Thus, a vertical transistor is formed at theintersection between each silicon pillar 45 and each electrode film 32and serves as a memory cell. Thus, the memory cells are arranged in athree-dimensional matrix configuration, and as a whole, a memory cellsection MS is fabricated.

Next, by a method similar to the aforementioned method for fabricatingthe lower select gate transistor section LSG, an upper select gatetransistor section USG is fabricated on the memory cell section MS.

More specifically, as shown in FIGS. 23A to 23C, an interlayerdielectric film 52 is formed illustratively using TEOS on the memorycell section MS, an upper gate electrode film 53 illustratively made ofpolysilicon is formed, and an interlayer dielectric film 54illustratively made of silicon nitride is formed.

Next, as shown in FIGS. 24A to 24C, a line-shaped trench 56 extending inthe word line direction is formed immediately above the trench 36. Next,a gate dielectric film 57 and a spacer film (not shown) are formed onthe inner surface of the trench 56, and the gate dielectric film 57 andthe spacer film are removed from the bottom surface of the trench 56,where a silicon body is buried. Then, by the sidewall transfer processand RIE, the silicon body and the gate dielectric film 57 are divided inthe word line direction into silicon pillars 65, and silicon oxide 66 isburied between the silicon pillars 65. Here, the silicon pillar 65 isformed immediately above and coupled to the silicon pillar 45. As viewedfrom above, the silicon pillar 65 is shaped like a rectangle.

Thus, an upper select gate transistor is formed at the intersectionbetween each silicon pillar 65 and each upper gate electrode film 53,and as a whole, an upper select gate transistor section USG isfabricated. In fabricating the lower select gate transistor section LSGand the upper select gate transistor section USG, the silicon body andthe like can be divided by RIE, and hence there is no need for wetetching as in fabricating the memory cell section MS described above,causing no problem with side etching. Hence, there is no need for theprocess of oxidizing both side portions of the silicon pillar.

Next, as shown in FIGS. 25A to 25C, in the region of the upper selectgate transistor section USG and the memory cell section MS between thetrenches 56, a trench 70 extending in the word line direction is formed.The trench 70 has a width of 1F. That is, a trench 70 having a width of1F is formed in a strip-shaped region having a width of 2F between thetrenches 56. Next, silicon oxide 71, for example, is buried in thetrench 70. Thus, the upper gate electrode film 53 of the upper selectgate transistor section USG is divided in the bit line direction intoline-shaped members extending in the word line direction. The upper gateelectrode film 53 is provided for each row of silicon pillars arrangedalong the word line direction. The electrode film 32 of the memory cellsection MS is also divided in the bit line direction into word linesextending in the word line direction. The electrode film 32 is alsoprovided for each row of silicon pillars arranged along the word linedirection. On the other hand, the lower gate electrode film 13 is notdivided, but provided in common with a plurality of rows of siliconpillars arranged along the word line direction.

Next, as shown in FIGS. 26A to 26C, a plurality of bit lines 75 made ofa metal and extending in the bit line direction are formed on the upperselect gate transistor section USG. The bit lines 75 are formedillustratively by the aforementioned sidewall transfer process with awidth of 0.5F and an arrangement pitch of 1F. Thus, the bit line 75 isformed for each row of silicon pillars 65 arranged along the bit linedirection, and is connected to the upper end portion of each siliconpillar 65. By the foregoing process, the nonvolatile semiconductormemory device 1 according to this embodiment is manufactured.

The nonvolatile semiconductor memory device 1 thus manufactured includesa lower select gate transistor section LSG, a memory cell section MS,and an upper select gate transistor section USG stacked in this order ona silicon substrate 11, and the memory cell section MS includes amultilayer body in which a plurality of dielectric films 31 andelectrode films 32 are alternately stacked. This multilayer bodyincludes trenches 36 extending in the word line direction, and aplurality of silicon pillars 45 are provided inside the trench 36. Ineach trench 36, a plurality of silicon pillars 45 are arranged in a rowalong the word line direction and spaced from each other. As viewed fromabove, each silicon pillar 45 is shaped like a rectangle. A memory film40 including a charge storage film 38 is provided between the siliconpillar 45, and the dielectric film 31 and the electrode film 32. In thememory film 40, the charge storage film 38 and the tunnel film 39 aredivided in the word line direction, and provided only in the bit linedirection as viewed from each silicon pillar 45, and not provided in theword line direction.

Likewise, also in the lower select gate transistor section LSG, siliconpillars 25 are arranged along the word line direction and spaced fromeach other in the trench 16. A gate dielectric film 17 is providedbetween the silicon pillar 25 and the lower gate electrode film 13 andthe like. The gate dielectric film 17 is divided in the word linedirection, and provided only in the bit line direction as viewed fromeach silicon pillar 25, and not provided in the word line direction.

Also in the upper select gate transistor section USG, silicon pillars 65are arranged along the word line direction and spaced from each other inthe trench 56. A gate dielectric film 57 is provided between the siliconpillar 65 and the upper gate electrode film 53 and the like. The gatedielectric film 57 is divided in the word line direction, and providedonly in the bit line direction as viewed from each silicon pillar 65,and not provided in the word line direction.

Next, the operation and effect of this embodiment are described.

In the nonvolatile semiconductor memory device 1 according to thisembodiment, trenches 16 extending in the word line direction are formedin the process shown in FIGS. 2A and 2B, a gate dielectric film 17 and asilicon body 19 are formed in the trench 16 in the process shown inFIGS. 3A to 5B, and the silicon body 19 is divided into silicon pillars25 with a pitch of 1F by the sidewall transfer process in the processshown in FIGS. 6 to 10B. The memory cell section and the upper selectgate transistor section are also formed by a similar method.

Thus, according to this embodiment, the space for forming the siliconpillar is not hole-shaped but line-shaped. Hence, with regard to theline direction (word line direction), it is only necessary to simplydivide the charge storage film and the gate dielectric film and thesilicon body, which enables downscaling to the limit of lithography andother processing techniques. For example, the arrangement pitch of thesilicon pillars can be set to 1F by making full use of the sidewalltransfer process. Consequently, the length of the memory cell in theword line direction is 1F. On the other hand, in the process shown inFIGS. 2A and 2B, the trenches 16 are formed with an arrangement pitch of3.5F in the bit line direction. Hence, the length of the memory cell inthe bit line direction is 3.5F. Thus, the memory cell has an area of3.5F².

The foregoing effect can be described from the viewpoint of theconfiguration as follows. In this embodiment, the charge storage filmand the gate dielectric film are not provided in the word line directionas viewed from each silicon pillar. Hence, in the word line direction,there is no need to allocate space for the charge storage film and thegate dielectric film. Thus, the length of the memory cell in the wordline direction can be set to the minimum length capable of separatingthe silicon pillars from each other.

Furthermore, in this embodiment, in the word line direction, the chargestorage film 38 is divided for each silicon pillar 45. Hence, reductionof the length of the memory cell in the word line direction does notcause charge migration between the memory cells through the chargestorage film 38. This can prevent interference between the memory cellsarranged in the word line direction, hence achieving good chargeretention characteristics and resistance to miswriting.

Moreover, in this embodiment, each silicon pillar is in contact with thememory film and the gate dielectric film at two surfaces facing in thebit line direction. Hence, as compared with the case of being in contactwith the memory film and the gate dielectric film at only one surface,this embodiment is superior in the characteristics of writing andreading information in the memory cell and the controllingcharacteristics of the upper and lower select gate transistor.

Next, a comparative example of this embodiment is described.

FIG. 27 is a plan view illustrating a nonvolatile semiconductor memorydevice according to this comparative example.

As shown in FIG. 27, in the nonvolatile semiconductor memory device 101according to this comparative example, a plurality of electrode films132 extend in the word line direction, and the electrode films 132 areseparated from each other by silicon oxide 171. Through holes 150 areformed through the electrode film 132, and a silicon pillar 145 isprovided inside the through hole 150. A memory film 140 is providedaround the silicon pillar 145. The memory film 140 is formed from ablock film, a charge storage film, and a tunnel film.

If the diameter of the through hole 150 is the minimum processingdimension F, the width of the electrode film 132 needs to be 2F or moreto form the through hole 150 therein. Furthermore, the width of thesilicon oxide 171 provided between the electrode films 132 needs to be1F or more. Hence, in the nonvolatile semiconductor memory deviceaccording to this comparative example, the minimum length of the memorycell in the word line direction is 2F, and the minimum length of thememory cell in the bit line direction is 3F. Thus, the memory cell hasan area of 6F².

In this comparative example, the memory film 140 is formed entirely onthe side surface of the through hole 150. Hence, the inner diameter ofthe through hole 150 must be larger than twice the thickness of thememory film 140. Furthermore, in the through hole 150, halfway throughthe formation process therefor, a protective film such as theaforementioned spacer film 18 (see FIGS. 4A and 4B) for protecting thesilicon oxide film in the memory film from dilute hydrofluoric acidtreatment needs to be formed. Hence, the thickness of the spacer filmalso needs to be taken into consideration to determine the innerdiameter of the through hole 150. For example, if the memory film 140has a thickness of 15 nm and the spacer film has a thickness of 5 nm,then the inner diameter of the through hole 150 needs to be larger than40 nm. Thus, in this comparative example, the minimum processingdimension F is restricted not by the limit of the lithography technique,but by the thickness of the memory film.

As described above, this embodiment can reduce the area of the memorycell, which is 6F² in the comparative example, to 3.5F². Consequently,the nonvolatile semiconductor memory device can achieve a higher levelof integration and higher capacity.

Next, a second embodiment of the invention is described.

FIG. 28A is a plan view illustrating a nonvolatile semiconductor memorydevice according to this embodiment, and FIG. 28B is a plan view showingportion A shown in FIG. 28A

More particularly, FIGS. 28A and 28B show the memory cell section MS ofthe nonvolatile semiconductor memory device according to thisembodiment.

As shown in FIGS. 28A and 28B, the nonvolatile semiconductor memorydevice 2 according to this embodiment has the same layered structure asthat of the above first embodiment. In this embodiment, the minimumprocessing dimension F is 30 nm, and the thickness of the memory film 40is 15 nm. In this case, the width of the trench 36, which is 1.5F, is 45nm, and the thickness of the memory film 40 is 15 nm on each side.Hence, the width of the silicon pillar 45 in the bit line direction is15 nm (=45 nm−15 nm×2). On the other hand, the width of the siliconpillar 45 in the word line direction, which is 0.5F, is 15 nm (=30nm/2). Hence, as viewed from above, the silicon pillar 45 has agenerally square shape. Thus, as compared with the case where the shapeof the silicon pillar 45 as viewed from above is a rectangle with thelongitudinal side aligned with the bit line direction, the ratio of thearea of the surface of the silicon pillar 45 facing the electrode film32 to the total surface area of the silicon pillar 45 is increased,which serves to enhance the channel controllability of the electrodefilm 32.

Furthermore, if the minimum processing dimension F is reduced to lessthan 30 nm with the thickness of the memory film 40 kept at 15 nm, thenthe shape of the silicon pillar 45 as viewed from above is a rectanglewith the longitudinal side aligned with the word line direction, whichserves to further enhance the channel controllability. Thus, the lengthof the silicon pillar 45 in the word line direction is preferably equalto or larger than the length of the silicon pillar in the bit linedirection. The configuration, operation, and effect of this embodimentother than the foregoing are the same as those of the above firstembodiment.

The invention has been described with reference to the embodiments.However, the invention is not limited to these embodiments. For example,those skilled in the art can suitably modify the above embodiments byaddition, deletion, or design change of components, or by addition,omission, or condition change of processes, and such modifications arealso encompassed within the scope of the invention as long as they fallwithin the spirit of the invention. For example, besides the filmsdescribed in the above embodiments, it is possible to provide variousfilms, such as an etching stopper film, a diffusion prevention film, afoundation film for improving matching with the overlying or underlyingfilm or the substrate, depending on the need of the processes andcharacteristics. Furthermore, a preprocessing step, cleaning step,heating step and the like can be inserted as needed between the processsteps. Furthermore, control circuits, interconnects and the like can beprovided as needed around the lower select gate transistor section, thememory cell section, and the upper select gate transistor sectiondescribed above.

1-11. (canceled)
 12. A method for manufacturing a nonvolatilesemiconductor memory device, comprising: forming a multilayer body byalternately stacking a plurality of dielectric films and a plurality ofelectrode films; forming a trench in the multilayer body, the trenchextending in one direction orthogonal to the stacking direction; forminga charge storage film on an inner surface of the trench; burying asemiconductor member inside the trench; and dividing the charge storagefilm and the semiconductor member in the one direction.
 13. The methodaccording to claim 12, wherein the dividing includes: forming a maskfilm; forming a line-and-space pattern extending in another directionbeing orthogonal to the stacking direction and crossing the onedirection; reducing the width of the pattern; etching the mask filmusing the pattern as a mask; forming a sidewall on a side surface of themask film after the etching; removing the mask film; and selectivelyremoving the charge storage film and the semiconductor member by etchingusing the sidewall as a mask.
 14. The method according to claim 13,wherein the selectively removing the charge storage film and thesemiconductor member includes: performing wet etching on the chargestorage film; performing dry etching on the semiconductor member; andoxidizing the semiconductor member.
 15. The method according to claim13, wherein the selectively removing the charge storage film and thesemiconductor member includes: performing wet etching on the chargestorage film; performing dry etching on the semiconductor member; andperforming chemical dry etching on the semiconductor member under acondition that etching rate for the semiconductor member is higher thanetching rate for the charge storage film.
 16. The method according toclaim 12, further comprising: forming a lower gate electrode film on asubstrate; forming a lower trench extending in the one direction in thelower gate electrode film; forming a lower gate dielectric film on aninner surface of the lower trench; burying a semiconductor member insidethe lower trench; and dividing the lower gate dielectric film and thesemiconductor member in the one direction, wherein the trench is formedimmediately above the lower trench.
 17. The method according to claim16, wherein the dividing the lower gate dielectric film and thesemiconductor member is performed by dry etching.
 18. The methodaccording to claim 12, further comprising: forming an upper gateelectrode film on the multilayer body; forming an upper trenchimmediately above the trench in the upper gate electrode film; formingan upper gate dielectric film on an inner surface of the upper trench;burying a semiconductor member inside the upper trench; and dividing theupper gate dielectric film and the semiconductor member in the onedirection.
 19. The method according to claim 18, wherein the dividingthe upper gate dielectric film and the semiconductor member is performedby dry etching.
 20. The method according to claim 12, furthercomprising: dividing the electrode film by forming another trenchextending in the one direction in a region of the multilayer bodybetween the trenches; and burying a dielectric material in the othertrench.